2SD835 Datasheet | Specifications & PDF Download

2SD835 NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCR.

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)=

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