isc Silicon NPN Darlington Power Transistor DESCR.
D835 - 2SD835
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com .2SD835 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)=.