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2SD835 - NPN Transistor

2SD835 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE= 400(Min) @IC= 4A. Low Collector Saturation Voltage- : VCE(sat)= 1. Minimum Lot-to-Lot vari.

2SD835 Applications

* Electronic ignitor
* Relay& solenoid drivers
* Motor controls
* Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 350 V VCEO Collector-Emitter Voltage 400 V VEBO Emit

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Datasheet Details

Part number
2SD835
Manufacturer
INCHANGE
File Size
209.70 KB
Datasheet
2SD835-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD835-like datasheet