2SK108 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for

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2SK1085-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS

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2SK1088-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variat

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2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MO

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2SK1088-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS

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isc N-Channel MOSFET Transistor 2SK1081 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variat

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2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MO

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2SK1088-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS

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2SK1089 F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-F

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