.
Fuji Electric
2SK1082-01 - N-Channel Silicon Power MOS-FET
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Fuji Electric
2SK1085-M - N-Channel MOSFET
2SK1085-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS.
Inchange Semiconductor
2SK1082 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for .
Fuji Electric
K1082 - 2SK1082
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
INCHANGE
2SK1085-M - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variat.
Fuji Electric
2SK1082 - N-Channel Silicon Power MOS-FET
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Fuji Electric
2SK1083 - N-channel MOS-FET
2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MO.
Fuji Electric
2SK1083-MR - N-channel MOS-FET
2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MO.
Fuji Electric
K1088-M - 2SK1088-M
2SK1088-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS.
Fuji
2SK1081-01 - N-Channel Silicon Power MOSFET
Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http:/.
Fuji Electric
2SK1088 - N-channel MOS-FET
2SK1088-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS.
Fuji Electric
2SK1088-M - N-channel MOS-FET
2SK1088-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS.
Fuji Electric
2SK1089 - N-channel MOS-FET
2SK1089 F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-F.
