.
Inchange Semiconductor
K1603 - 2SK1603
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1603 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source .
Matsushita Electric
K1606 - 2SK1606
Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q .
Inchange Semiconductor
2SK1603 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations f.
Inchange Semiconductor
2SK1602 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations f.
Inchange Semiconductor
2SK1605 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat.
Inchange Semiconductor
2SK1609 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for .
Inchange Semiconductor
2SK1608 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for .
Inchange Semiconductor
2SK1600 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for.
Inchange Semiconductor
2SK1601 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for.
Inchange Semiconductor
2SK1607 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot varia.
Toshiba Semiconductor
2SK1602 - Silicon N-Channel MOSFET
www.DataSheet4U.com .
Inchange Semiconductor
2SK1606 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat.
Toshiba Semiconductor
2SK1600 - Silicon N-Channel MOSFET
www.DataSheet4U.com .
Panasonic
2SK1606 - Field Effect Transistors
Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q .
