Inchange Semiconductor K1603 - 2SK1603 INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1603 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source (27 views)
Inchange Semiconductor 2SK1607 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot varia (8 views)
Inchange Semiconductor 2SK1605 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat (8 views)
Inchange Semiconductor 2SK1609 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for (7 views)
Inchange Semiconductor 2SK1608 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for (7 views)
Panasonic 2SK1606 - Field Effect Transistors Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q (7 views)
Inchange Semiconductor 2SK1603 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations f (6 views)
Inchange Semiconductor 2SK1602 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations f (6 views)
Inchange Semiconductor 2SK1601 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for (5 views)
Inchange Semiconductor 2SK1606 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat (5 views)
Matsushita Electric K1606 - 2SK1606 Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q (5 views)
Inchange Semiconductor 2SK1600 - N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for (3 views)