2SK160 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations f

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isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for

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Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor 2SK1607 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot varia

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isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1603 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations f

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Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

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