2SK1761 Silicon N-Channel MOS FET Application Hig.
Toshiba
K1767 - 2SK1767
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Hitachi Semiconductor
2SK1764 - N-Channel MOSFET
2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4.
Hitachi Semiconductor
2SK176 - N-Channel MOSFET
2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
Hitachi Semiconductor
2SK1761 - N-Channel MOSFET
2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
Hitachi Semiconductor
K1762 - 2SK1762
2SK1762 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switch.
Hitachi Semiconductor
2SK1762 - N-Channel MOSFET
2SK1762 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
Inchange Semiconductor
2SK1767 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo.
Inchange Semiconductor
2SK1766 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Fast Switching Speed ·Minimum Lot.
Toshiba
2SK1767 - Field Effect Transistor
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Renesas Technology
2SK1762 - Silicon N-Channel MOSFET
2SK1762 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No .
