2SK346 Datasheet | Specifications & PDF Download

2SK3469-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-

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2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) www.DataSheet4U.com 2SK3462 Unit: mm Switching Regulator, DC/DC Converte

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isc N-Channel MOSFET Transistor 2SK346 FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resis

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3467 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3467 is N-C

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2SK3468-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSF

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2SK3468-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSF

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2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) www.DataSheet4U.com 2SK3462 Unit: mm Switching Regulator, DC/DC Converte

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isc N-Channel MOSFET Transistor 2SK3468 FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Re

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2SK3469-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-

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2SK3460 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 150 +20, –10 ± 18 ± 72 35 (Tc = 25ºC) 180 18 150 –5

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3467 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3467 is N-Channel MOS FET device

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2SK3461-S-VB 2SK3461-S-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()

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2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Unit: mm Low drain-source ON resistance: RDS (O

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