2SK3561 TOSHIBA Field Effect Transistor Silicon N .
Toshiba Semiconductor
K3561 - 2SK3561
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistanc.
Toshiba
2SK3561 - Silicon N-Channel MOSFET
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistanc.
Inchange Semiconductor
2SK3561 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3561 FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Res.
