2SK3598-01 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor 2SK3598-01 FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On

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2SK3598-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proo

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