2SK372 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor 2SK3725-01 FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source O

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Ordering number : ENN8173A 2SK3720 www.DataSheet4U.com N-Channel Silicon MOSFET 2SK3720 Features • • • FM Tuner, VHF-Band Amplifier Applications

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap

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MOS FET 2SK3724 (under development) Features ● ON resistance 0.005Ω max. ● Built-in G-S bidirectional Zener diode ● Trench MOS structure Application

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap

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( DataSheet : www.DataSheet4U.com ) 2SK3728-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G S

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isc N-Channel MOSFET Transistor 2SK3726-01MR FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source

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SMD Type TransistIoCrs N-channel Enhancement Mode MOSFET 2SK3723 Features Low on-resistance, low Qg High avalanche resistance For high-speed switch

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isc N-Channel MOSFET Transistor 2SK3727-01 FEATURES ·Drain Current : ID= 2.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source O

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2SK3727-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series www.DataSheet4U.com Features H

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2SK3725-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proo

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isc N-Channel MOSFET Transistor 2SK3728-01MR FEATURES ·Drain Current : ID= 2.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source

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2SK3726-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-pr

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