| Part Number | Description | Manufacture |
|---|---|---|
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2SK3868 (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta |
 Toshiba Semiconductor |
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|
N-Channel Power MOSFET RDS(ON) = 1.00Ω @ VGS = 10V Ultra low gate charge(60nC typical ) Low reverse transfer capacitance (C RSS = 45pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Sour |
 nELL |
|
|
2SK389 |
Toshiba Semiconductor |
|
|
Silicon N-Channel MOSFET |
 Toshiba |
|
|
2SK3880 bient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit 1 °C/W °C/W 3 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Rep |
Toshiba |
|
|
2SK3869 usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
Toshiba Semiconductor |
|
|
N-Channel MOSFET |
Toshiba Semiconductor |
|
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N-Channel MOSFET (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta |
Toshiba Semiconductor |
|
|
N-Channel Transistor . High Breakdown Voltage : V/g^)Dgs=450V . High Forward Transfer Admittance : Yf s1 1 =5S (Typ . . Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V lDSS=lmA(Max.) @ Vds=450V . Enhancement-Mode : V t h=1.5~3.5V @ lD=lmA MAXIMUM RATI |
Toshiba |
|
|
Transistor |
 ETC |
| Total 119 results |
