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2SK386 - N-Channel Transistor

Key Features

  • . High Breakdown Voltage : V/g^)Dgs=450V . High Forward Transfer Admittance : Yf s1 1 =5S (Typ . . Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V lDSS=lmA(Max. ) @ Vds=450V . Enhancement-Mode : V t h=1.5~3.5V @ lD=lmA.

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Datasheet Details

Part number 2SK386
Manufacturer Toshiba
File Size 41.43 KB
Description N-Channel Transistor
Datasheet download datasheet 2SK386 Datasheet

Full PDF Text Transcription for 2SK386 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK386. For precise diagrams, and layout, please refer to the original PDF.

: 2SK386 ) SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTR...

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CHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm y20i5MAX. 03.3+U2 ,- ;I' FEATURES . High Breakdown Voltage : V/g^)Dgs=450V . High Forward Transfer Admittance : Yf s1 1 =5S (Typ . . Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V lDSS=lmA(Max.) @ Vds=450V . Enhancement-Mode : V t h=1.5~3.5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) SYMBOL VdSX VGSS ID Idp Pd RATING 450 ±20 10 15 120 UNIT 545±Q15 wo 545±ai5 x" +1 to —^C5 CO 2 57 | 1. GATE 2.