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2SK3863
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3863
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.95 MAX. 0.6 ± 0.15
Unit: mm
6.8 MAX. 5.2 ± 0.2 1.7 ± 0.2 0.6 MAX.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 40 180 5 4 150 -55 to 150 A W mJ A mJ °C °C Unit
12.0 MIN.
5.5 ± 0.2
V
1
1. 2.
2
3
2.5 MAX.
2SK3863 Datasheet
