2SK3863
2SK3863 is N-Channel MOSFET manufactured by Toshiba.
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Switching Regulator Applications
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- - Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
0.95 MAX. 0.6 ± 0.15
Unit: mm
6.8 MAX. 5.2 ± 0.2 1.7 ± 0.2 0.6 MAX.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 40 180 5 4 150 -55 to 150 A W m J A m J °C °C Unit
12.0 MIN.
5.5 ± 0.2
1. 2.
2.5 MAX.
2 1 3
Pulse (t = 1 ms) (Note 1)
GATE DRAIN （HEAT SINK） 3. SOURSE
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-64 2-7B5B
Weight: 0.36 g (typ.)
1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2
1.1 ± 0.2
0.6 MAX.
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Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
0.6 ± 0.15 0.95 MAX. 0.6 ± 0.15
0.6 MAX.
5.5 ± 0.2
9.6 ± 0.3
0.6 MAX. 2.3 2.3 2.5 MAX.
Thermal Characteristics
Characteristic Thermal resistance, channel to case Symbol Rth (ch-c) Max 3.125 Unit °C/W
1....
