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2SK3869
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3869
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.
2SK3869 Datasheet
