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2SK3843
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
2SK3843
Switching Regulator, DC/DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 2.7 mΩ (typ.) : |Yfs| = 120 S (typ.) Unit: mm
z Low leakage current : IDSS = 10 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com
Maximum Ratings (Ta = 25°C)
Characteristic Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 75 300 125 542 75 12.
2SK3843 Datasheet
