2SK3846 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U- MOSIII) Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain- source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.) : |Yfs| = 33 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.5~2.5 V (VDS = 10 V, ID = 1 m A) .. Maximum Ratings (Ta = 25°C) Characteristic Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 26 78 25 63 26 2.5 150 - 55~150 Unit V V V A A W m J A m J °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch- c) Rth (ch- a) Max 5.0 62.5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 97 µH, IAR = 26 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 2006-09-27 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain- source breakdown voltage Gate threshold voltage Drain- source ON resistance Forward transfer admittance .. Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn- on time Switching time Fall time tf toff Qg Qgs Qgd VDD ≈ 32 V, VGS = 10 V, ID = 26 A ton 4.7 Ω 10 V 0V ID = 13 A RL = 1.54Ω VOUT - 22 - ns - 10 - VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS...