2SK3847 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U- MOS III) Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain- source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.) : |Yfs| = 36 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.5 to 2.5 V .. (VDS = 10 V, ID = 1 m A) Maximum Ratings (Ta = 25°C) Characteristic Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 32 96 30 47 32 3 150 - 55~150 Unit V V V A A W m J A m J °C °C Drain power dissipation Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1.5 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch- c) Rth (ch- a) Max 4.17 83.3 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 48 μH, RG = 25 Ω, IAR = 32 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. JEDEC JEITA TOSHIBA ― ― 2-10S2B Weight: 1.5 g (typ.) 2006-09-27 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain- source breakdown voltage Gate threshold voltage Drain- source ON resistance Forward transfer admittance .. Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr 10 V VGS 0V 15 Ω ID = 16 A RL = 1.25 Ω Output VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 m A, VGS = 0 V ID = 10 m A, VGS = -...