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2SK3844
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
2SK3844
Switching Regulator, DC-DC Converter Applications Motor Drive Applications
• • Low drain-source ON resistance: RDS (ON) = 4.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Unit: mm
• Low leakage current: IDSS = 100 μA (max)(VDS = 60 V) www.DataSheet4U.com • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 45 527 45 4.
2SK3844 Datasheet
