2SK416 Datasheet | Specifications & PDF Download

60 V, 100 A, 3.8 mΩ Low RDS(ON) N ch Trench Power MOSFET 2SK4161D Features ● V(BR)DSS ---------------------------------60 V (ID = 100 μA) ● ID ------

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor 2SK416L FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Re

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www.DataSheet4U.com Ordering number : ENA0736 2SK4164 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4164 Features • • • General-Pu

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isc N-Channel MOSFET Transistor 2SK416S FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Re

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