2k8 Datasheet | Specifications & PDF Download

ADVANCE SRAM FEATURES • High speed: 12, 15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and gro

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om Data Sheet MUAAeReto4Uu.tcing CoProcessor (RCP) FamilyAPPLICATION BENEFITS Sh• High performance MAC Address processor for tamultiport switches and

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IVIIC:I=ION 1-·, ADVANCE MT5LC512K8D4 REVOLUTIONARY PINOUT 512K x 8 SRAM SRAM FEATURES • All I/O pins are 5V tolerant • High speed: 12, 15, 20, 25

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Chengdu Tieda Electronics Co., Ltd. Surge Protecting Varistor 、 Explanation of Part Numbers： MYL 1 — 40 K 621 ①⑤ ④ ②③ 1.1 ① 1.2 ② 1：Epoxy Resin Co

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Thick Film Chip Resistor 0603 Features •  Small size and light weight •  Suitable for both wave and reflow soldering •  Reduction of assembly costs

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om Data Sheet MUAAeReto4Uu.tcing CoProcessor (RCP) FamilyAPPLICATION BENEFITS Sh• High performance MAC Address processor for tamultiport switches and

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ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features I Low Power Monolithic CMOS 512K x 8 SRAM I Full Military (-55°C to +125°C) Temperature Rang

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.3 Final Power Man

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ412K8YRA Surface Mounting Chip LED TSS Type  Absolute Maxi

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Silicon N-Channel Power MOSFET HPA650R2K8DN ○R General Description： HPA650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM Plastic Path™ Features Low Power Monolithic CMOS 512K x 8 SRAM s Operating Temperature Range

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Silicon N-Channel Power MOSFET HPU650R2K8DN ○R General Description： HPU650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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LNJ812K87RA Hight Bright Surface Mounting Chip LED TSS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Power dissipation PD F

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Austin Semiconductor, Inc. EEPROM AS8E512K8 512K x 8 EEPROM EEPROM Module AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-93091 • MIL-STD-883 FEAT

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ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM BS I NC. Plastic Path™ Features s Low Power Monolithic CMOS 512K x 8 SRAM s Operating Tempe

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White Electronic Designs www.DataSheet4U.com WMF512K8-XXX5 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES Access Times of 60, 70, 90, 120, 150ns P

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Ver 1.2 Radiation-Hardened SRAM Datasheet Part Number：B8R512K8RH Version No. 1.0 1.1 1.2 Page of Revise Control Publish Time 11.25.2012 07.22.2015

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ACT–F512K8 High Speed 4 Megabit Monolithic FLASH Features CIRCUIT TECHNOLOGY www.aeroflex.com s Low Power Monolithic 512K x 8 FLASH s Industry Sta

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512Kx8 LP SRAM EM6112K800V Series GENERAL DESCRIPTION The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,

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Thick Film Chip Resistor 0603 Features •  Small size and light weight •  Suitable for both wave and reflow soldering •  Reduction of assembly costs

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