.
Panasonic Semiconductor
LNJ812K8SRA - LNJ212R8ARA LNJ312G8LRA LNJ312G8TRA LNJ412K8YRA LNJ812R8DRA LNJ812K8SRA
Surface Mounting Chip LED TSS Type Conventional Part No. Global Prat No. Lighting Color 1.6 ± 0.1 Unit: mm s Absolute Maximum Ratings (Ta = 25°C) .
Fenghua Advanced Technology
FNR-32K820 - ZINC OXIDE VARISTOR
FENGHUA ZINC OXIDE VARISTOR Fenghua (HK) Electronics Ltd. Unit 207, Fu Hang Industrial Building, No.1, Hok Yuen Street East, Hung Hom, Hong Kong Tel:.
Fenghua Advanced Technology
FNR-32K821 - ZINC OXIDE VARISTOR
FENGHUA ZINC OXIDE VARISTOR Fenghua (HK) Electronics Ltd. Unit 207, Fu Hang Industrial Building, No.1, Hok Yuen Street East, Hung Hom, Hong Kong Tel:.
Ancol
ANR-32K820 - ZINC OXIDE VARISTOR
ZINC OXIDE VARISTOR Ancol FEATURES: l Widely voltage range 1 8v-1 .8kv l Fast response to the rapidly increase Voltage (Mu sec.) l Excellent non-lin.
Ancol
ANR-32K821 - ZINC OXIDE VARISTOR
ZINC OXIDE VARISTOR Ancol FEATURES: l Widely voltage range 1 8v-1 .8kv l Fast response to the rapidly increase Voltage (Mu sec.) l Excellent non-lin.
Panasonic Semiconductor
LNJ412K8YRA - Surface Mounting Chip LED
Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ412K8YRA Surface Mounting Chip LED TSS Type Absolute Maxi.
Rohm
BR24L16 - 2k8 bit electrically erasable PROM
Memory ICs BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W 2k×8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-.
Rohm
BR24L16F-W - 2k8 bit electrically erasable PROM
Memory ICs BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W 2k×8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-.
Rohm
BR24L16FJ-W - 2k8 bit electrically erasable PROM
Memory ICs BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W 2k×8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-.
Rohm
BR24L16FV-W - 2k8 bit electrically erasable PROM
Memory ICs BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W 2k×8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-.
Rohm
BR24L16FVM-W - 2k8 bit electrically erasable PROM
Memory ICs BR24L16-W / BR24L16F-W / BR24L16FJ-W / BR24L16FV-W / BR24L16FVM-W 2k×8 bit electrically erasable PROM BR24L16-W / BR24L16F-W / BR24L16FJ-.
Micross
AS5C512K8 - 512K x 8 SRAM
AAuussttininSSeemmiiccoonndduuccttoorr,, IInncc.. ASAA5SSCS55S5SCRC1R5R5A211KAA2M28KMKM88 F•A•••5HRFA•••5HR SSSMMSSSEV1UMMEVIEFA•••15HRPMMIIEGMISSPA.
Micross
AS5LC512K8 - 512K x 8 SRAM
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT AVAILABLE AS MILITARY SPECIFICATIONS •MIL-STD-883 for Ceramic •Extended Temperature Pl.
Austin Semiconductor
AS8E512K8 - 512K x 8 EEPROM
Austin Semiconductor, Inc. EEPROM AS8E512K8 512K x 8 EEPROM EEPROM Module AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-93091 • MIL-STD-883 FEAT.
Beijing Microelectronics
B8R512K8RH - Radiation-Hardened SRAM
Ver 1.2 Radiation-Hardened SRAM Datasheet Part Number：B8R512K8RH Version No. 1.0 1.1 1.2 Page of Revise Control Publish Time 11.25.2012 07.22.2015 .
Aeroflex
ACT-S512K8 - 4 Megabit Monolithic SRAM
ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features I Low Power Monolithic CMOS 512K x 8 SRAM I Full Military (-55°C to +125°C) Temperature Rang.
Aeroflex
ACT-F512K8 - High Speed 4 Megabit Monolithic FLASH
ACT–F512K8 High Speed 4 Megabit Monolithic FLASH Features CIRCUIT TECHNOLOGY www.aeroflex.com s Low Power Monolithic 512K x 8 FLASH s Industry Sta.
Aeroflex
ACT-PS512K8 - 4 Megabit Plastic Monolithic SRAM
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM BS I NC. Plastic Path™ Features s Low Power Monolithic CMOS 512K x 8 SRAM s Operating Tempe.
Aeroflex Circuit Technology
ACT-PS512K8 - ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM Plastic Path™ Features Low Power Monolithic CMOS 512K x 8 SRAM s Operating Temperature Range .
HUAJING MICROELECTRONICS
HPA650R2K8DN - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET HPA650R2K8DN ○R General Description： HPA650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou.
