30-40 Datasheet | Specifications & PDF Download

A1 A1semi Electronics Ltd AS54303A 400KHz Synchronous Rectified Step-Down Converter „ GENERAL DESCRIPTION The AS5430 is a monolithic synchronous bu

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STR-W6252D www.DataSheet4U.com 60 W-Universal Input/40 W-230 Vac Input PWM Switching Regulators Features and Benefits ▪ Overcurrent protection (OCP)

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SPECIFICATION No. STK403-130 1. Case Outline 15Pins (See attached Package Outline Diagram) 2. Function 3. Application 2 channels AF power amplifier 1

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AON7408 30V N-Channel MOSFET General Description • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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AON7403 30V P-Channel MOSFET General Description Product Summary The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultr

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AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advanced trench MOSFET technology with a low resistance p

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Analog Power Freescale N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS

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AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(O

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Datasheet 4A 300KHz 32V Buck DC to DC Converter XL4003 Features  Wide 5V to 32V Input Voltage Range  Output Adjustable from 0.8V to 30V  Maximum

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Automotive Relays PCB Double Relays Double Mini Relay DMR n Limiting continuous current 30 A n Easiest PCB routing among all PCB relays Typical app

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AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package

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Ordering number : ENN7730 www.DataSheet4U.com SANYO Semiconductors DATA SHEET Thick-Film Hybrid IC STK404-130S Overview One-Channel Class AB Audi

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CMP40P03 P-Ch -30V Fast Switching MOSFETs General Description The CMP40P03 is a P-channel Power MOSFET. It has specifically been designed to minimiz

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IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ultra Fi

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Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BEG REPR

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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AO3407 30V P-Channel MOSFET General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This de

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AON7409 30V P-Channel MOSFET General Description Product Summary • The AON7409 combines advanced trench MOSFET technology with a low resistance pac

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