30-60V Datasheet | Specifications & PDF Download

PFC Device Corporation PFR30L60CT PFR30L60CTF PFR30L60CTI PFR30L60CTB 30A 60V MOS Schottky Rectifier Major ratings and characteristics Characteris

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FR5305-VB FR5305-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V

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SI2308-VB SI2308-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS

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FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General Description These N-Channel enhancement mode power field ef

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UMW R UMW 30N06 60V N-Channel Enhancement Mode Power MOSFET UMW 30N06 General Description The 30N06 uses advanced trench technology and design to pr

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MOSFET – Power, N-Channel, DPAK/IPAK 12 A, 60 V NTD3055-094,  NVD3055-094 Designed for low voltage, high speed switching applications in power supplie

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® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) =

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MOSFET – Power, N-Channel, DPAK/IPAK 12 A, 60 V NTD3055-094,  NVD3055-094 Designed for low voltage, high speed switching applications in power supplie

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PFC Device Corporation PFR30L60CT PFR30L60CTF PFR30L60CTI PFR30L60CTB 30A 60V MOS Schottky Rectifier Major ratings and characteristics Characteris

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VBZL30N06 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.023 at VGS = 10 V 0.027 at VGS = 4.5 V ID (A)a, e

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PD - 97357 IRLB3036PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power

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AOD4130/AOI4130 60V N-Channel MOSFET General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package

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AFN2308AS23RG-VB AFN2308AS23RG-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING • HIGH TEMPERATURE, EXTEND LIFE (5000 H

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FQP30N06L — N-Channel QFET® MOSFET FQP30N06L N-Channel QFET® MOSFET 60 V, 32 A, 35 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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FERD30L60C 60 V field-effect rectifier diode Datasheet - production data A1 A2 K K K A2 K A1 TO-220AB A2 A1 D²PAK Features  ST advanced rectif

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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