30-60V Datasheet | Specifications & PDF Download

MOSFET – Power, N-Channel, DPAK/IPAK 12 A, 60 V NTD3055-094,  NVD3055-094 Designed for low voltage, high speed switching applications in power supplie

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OSD30N06T http://www.osen.net.cn 60V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche e

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PFC Device Corporation PFR30L60CT PFR30L60CTF PFR30L60CTI PFR30L60CTB 30A 60V MOS Schottky Rectifier Major ratings and characteristics Characteris

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PHP3055E-VB PHP3055E-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.08

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® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) =

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Small Signal MOSFET  mAmps, 60 Volts N–Channel SOT23-6 • We declare that the material of product compliance with RoHS requirements. • ESD Protected

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING • HIGH TEMPERATURE, EXTEND LIFE (5000 H

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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RY8630 60V 3A 500KHz Async Step-Down Regulator RY8630 Features • Wide 4.5V to 60V Operating Input Range • 150mΩ Internal Power MOSFETs • 3A Contin

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Features ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating $SSOLFD

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AP30N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06NF uses advanced trench technology to provide excellent RDS(ON), low gate charg

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PD - 97357 IRLB3036PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power

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DXTN03060BFG 60V NPN LOW VCESAT TRANSISTOR IN PowerDI3333-8 Features  BVCEO > 60V  Small Form Factor Thermally Efficient Package. Enables Higher De

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MOSFET – Power, N-Channel, DPAK/IPAK 12 A, 60 V NTD3055-094,  NVD3055-094 Designed for low voltage, high speed switching applications in power supplie

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Alfa-MOS Technology General Description AFP9530S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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PD -97148 IRLS3036-7PPbF HEXFET® Power MOSFET www.datasheet4u.com Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS

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PFC Device Corporation PFR30L60CT PFR30L60CTF PFR30L60CTI PFR30L60CTB 30A 60V MOS Schottky Rectifier Major ratings and characteristics Characteris

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PFC Device Corporation PFR30L60CT PFR30L60CTF PFR30L60CTI PFR30L60CTB 30A 60V MOS Schottky Rectifier Major ratings and characteristics Characteris

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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