30-60V Datasheet | Specifications & PDF Download

RF1K49154 Data Sheet October 1999 File Number 4143.3 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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PFC Device Corporation PFR30L60CT PFR30L60CTF PFR30L60CTI PFR30L60CTB 30A 60V MOS Schottky Rectifier Major ratings and characteristics Characteris

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4N06L30-VB 4N06L30-VB Datasheet N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V I

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FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General Description These N-Channel enhancement mode power field ef

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FERD30H60C 60 V field-effect rectifier diode Datasheet - production data A1 A2 K K K A2 K A1 TO-220AB A2 A1 D²PAK Features  ST advanced rectif

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Construction and Dimension: Radial Leaded-RDL 60V Series PPTC RESETTABLE FUSE Model RDL60V010 RDL60V017 RDL60V020 RDL60V025 RDL60V030 RDL60V040 RDL6

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Construction and Dimension: Radial Leaded-RDL 60V Series PPTC RESETTABLE FUSE Model RDL60V010 RDL60V017 RDL60V020 RDL60V025 RDL60V030 RDL60V040 RDL6

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AOD4130/AOI4130 60V N-Channel MOSFET General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package

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http://www.fujielectric.com/products/semiconductor/ FGW30N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 30A Features Low power loss

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RSR030N06 　　Nch 60V 3A Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 85mΩ ±3A 1W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3)

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Silan Microelectronics SVGQ06130PD_Datasheet -80A, -60V P-CHANNEL MOSFET DESCRIPTION SVGQ06130PD is an P-channel enhancement mode power MOS field

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Small Signal MOSFET  mAmps, 60 Volts N–Channel SOT23-6 • We declare that the material of product compliance with RoHS requirements. • ESD Protected

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FDN5630 March 2000 FDN5630 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the

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FQPF30N06 May 2001 QFET FQPF30N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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