FQD30N06L Datasheet, Mosfet, Fairchild Semiconductor

FQD30N06L Features

• Mosfet
• 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast sw

PDF File Details

Part number:

FQD30N06L

Manufacturer:

Fairchild Semiconductor

File Size:

649.71kb

Download:

📄 Datasheet

Description:

60v logic n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

FQD30N06L Application

• Applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. T

TAGS

FQD30N06L

Fairchild Semiconductor

📁 Related Datasheet

FQD30N06 - 60V N-Channel MOSFET (Fairchild Semiconductor)
FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General Description These N-Channel enhancement mode power field ef.

FQD3N25 - 250V N-Channel MOSFET (Fairchild Semiconductor)
FQD3N25 / FQU3N25 November 2000 QFET FQD3N25 / FQU3N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect.

FQD3N30 - 300V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD3N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD3N50C - 500V N-Channel MOSFET (Fairchild Semiconductor)
FQD3N50C/FQU3N50C 500V N-Channel MOSFET QFET FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features • 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate.

FQD3N60 - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQD3N60 / FQU3N60 April 2000 QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.

FQD3N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQD3N60C FQD3N60C 600V N-Channel MOSFET Features • 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5.

FQD3N80 - N-Channel MOSFET (OuCan)
FQD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The FQD3N80 has been fabricated using an advanced high voltage MOSFET proces.

FQD3P20 - 200V P-Channel MOSFET (Fairchild Semiconductor)
FQD3P20 / FQU3P20 April 2000 QFET FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect tr.

FQD3P50 - 500V P-Channel MOSFET (Fairchild Semiconductor)
FQD3P50 / FQU3P50 FQD3P50 / FQU3P50 500V P-Channel MOSFET January 2009 QFET® General Description These P-Channel enhancement mode power field effec.