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FQD3N50C

500V N-Channel MOSFET

FQD3N50C Features

* 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V

* Low gate charge ( typical 10 nC )

* Low Crss ( typical 8.5 pF)

* Fast switching

* 100 % avalanche tested

* Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect tran

FQD3N50C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD3N50C Datasheet (1.02 MB)

Preview of FQD3N50C PDF

Datasheet Details

Part number:

FQD3N50C

Manufacturer:

Fairchild Semiconductor

File Size:

1.02 MB

Description:

500v n-channel mosfet.

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TAGS

FQD3N50C 500V N-Channel MOSFET Fairchild Semiconductor

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