FQD30N06 Datasheet (Fairchild Semiconductor)

FQD30N06, 60V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQD30N06 Features

* 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V

* Low gate charge ( typical 19 nC)

* Low Crss ( typical 40 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 150oC maximum junction temperature rating

* RoHS Compliant