FQD30N06 Datasheet - Fairchild Semiconductor

FQD30N06 60V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD30N06 Features

* 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V

* Low gate charge ( typical 19 nC)

* Low Crss ( typical 40 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 150oC maximum junction temperature rating

* RoHS Compliant

FQD30N06_FairchildSemiconductor.pdf

FQD30N06 Datasheet Preview — Preview of FQD30N06 PDF

Datasheet Details

Part number:

FQD30N06

Manufacturer:

Fairchild Semiconductor

File Size:

702.95 KB

Description:

60v n-channel mosfet.

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FQD30N06 FQD30N06 60V N-Channel MOSFET Fairchild Semiconductor

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