FQD30N06 - 60V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD30N06
Manufacturer	Fairchild Semiconductor
File Size	702.95 KB
Description	60V N-Channel MOSFET
Datasheet	FQD30N06_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V.
Low gate charge ( typical 19 nC).
Low Crss ( typical 40 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
150oC maximum junction temperature rating.
RoHS Compliant DD ! GS D-PAK FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage.

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Published: Apr 1, 2005 |