FQD12N20L Datasheet - ON Semiconductor

FQD12N20L - N-Channel MOSFET

This N *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQD12N20L Features

* 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 16 nC)

* Low Crss (Typ. 17 pF)

* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Rating Unit VDSS ID IDM VGSS EAS IAR EAR

FQD12N20L-ONSemiconductor.pdf