FQD12N20L Datasheet - ON Semiconductor

FQD12N20L, N-Channel MOSFET

MOSFET * N-Channel, QFET 200 V, 9.0 A, 280 mW FQD12N20L Description This N *Channel enhancement mode power MOSFET is produced using on

Features

* 9.0 A, 200 V, RDS(on) = 280 mW (Max.
) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ.
16 nC)
* Low Crss (Typ.
17 pF)
* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Rating Unit VDSS ID IDM VGSS EAS IAR EAR

FQD12N20L-ONSemiconductor.pdf