FQD12N20LTM_F085 - 200V Logic Level N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQD12N20LTM_F085
Manufacturer	Fairchild Semiconductor
File Size	639.88 KB
Description	200V Logic Level N-Channel MOSFET
Datasheet	FQD12N20LTM_F085 Datasheet
Additional preview pages of the FQD12N20LTM_F085 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V.
Low gate charge ( typical 16 nC).
Low Crss ( typical 17 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
Low level gate drive requirement allowing direct opration from logic drivers.
Qualified to AEC Q101.
RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR Parameter Drain-Source Voltage.

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Published: Aug 8, 2015 |