FQD12N20 Datasheet - Fairchild Semiconductor

FQD12N20 200V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD12N20 Features

* 9 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 18 nC)

* Low Crss (Typ. 18 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbo

FQD12N20_FairchildSemiconductor.pdf