FQD12N20

200V N-Channel MOSFET

Fairchild Semiconductor

FQD12N20 Features

* 9 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 18 nC)

* Low Crss (Typ. 18 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbo

FQD12N20 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD12N20 Datasheet (963.00 KB)

FQD12N20 Datasheet Preview — Preview of FQD12N20 PDF

Datasheet Details

Part number:

FQD12N20

Manufacturer:

Fairchild Semiconductor

File Size:

963.00 KB

Description:

200v n-channel mosfet.

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FQD12N20 200V N-Channel MOSFET Fairchild Semiconductor

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FQD12N20 Features

FQD12N20 General Description

Datasheet Details

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Description:

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