FQD12P10TM_F085 Datasheet - Fairchild Semiconductor

FQD12P10TM_F085, 100V P-Channel MOSFET

FQD12P10TM_F085 P-Channel MOSFET February 2010 FQD12P10TM_F085 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

* -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
* Low gate charge ( typical 21 nC)
* Low Crss ( typical 65 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Qualified to AEC Q101
* RoHS Compliant tm DD G S D-PAK

FQD12P10TM_F085-FairchildSemiconductor.pdf