FQD18N20V2 Datasheet - ON Semiconductor

N-Channel MOSFET

FQD18N20V2 Features

* 15 A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A

* Low Gate Charge (Typ. 20 nC)

* Low Crss (Typ. 25 pF)

* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS ID IDM VGSS EAS IAR EAR

FQD18N20V2 General Description

This N *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQD18N20V2 Datasheet (255.91 KB)