FQD18N20V2 - N-Channel MOSFET
This N *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s
FQD18N20V2 Features
* 15 A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A
* Low Gate Charge (Typ. 20 nC)
* Low Crss (Typ. 25 pF)
* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS ID IDM VGSS EAS IAR EAR
