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FQD10N20L Datasheet - Fairchild Semiconductor

FQD10N20L N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD10N20L Features

* 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 14 pF)

* 100% Avalanche Tested

* Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absolute Maximu

FQD10N20L_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQD10N20L

Manufacturer:

Fairchild Semiconductor

File Size:

813.16 KB

Description:

N-channel mosfet.

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FQD10N20L FQD10N20L N-Channel MOSFET Fairchild Semiconductor

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