FQD10N20L - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQD10N20L
Manufacturer	Fairchild Semiconductor
File Size	813.16 KB
Description	N-Channel MOSFET
Datasheet	FQD10N20L Datasheet
Additional preview pages of the FQD10N20L datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

7.6 A, 200 V, RDS(on) = 360 mΩ (Max. ) @ VGS = 10 V, ID = 3.8 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 14 pF).
100% Avalanche Tested.
Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuo.

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Published: Apr 1, 2005 |