FQD16N25C

N-Channel MOSFET

ON Semiconductor

FQD16N25C Features

* 16 A, 250 V RDS(on) = 270 mW (Max.) @ VGS = 10 V, ID = 8 A

* Low Gate Charge (Typ. 41 nC)

* Low Crss (Typ. 68 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Symbol Parameter Valu

FQD16N25C General Description

This N

*Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on

*state resistance, and to provide superior switching performance and high avalanche energy s.

FQD16N25C Datasheet (320.05 KB)