FQD11P06 - 60V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQD11P06
Manufacturer	Fairchild Semiconductor
File Size	1.22 MB
Description	60V P-Channel MOSFET
Datasheet	FQD11P06 Datasheet
Additional preview pages of the FQD11P06 datasheet.

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-9.4 A, -60 V, RDS(on) = 185 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche En.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |