FQD11P06 - 60V P-Channel MOSFET
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQD11P06 Features
* -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS
