FQD11P06 Datasheet - Fairchild Semiconductor

FQD11P06 60V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD11P06 Features

* -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS

FQD11P06_FairchildSemiconductor.pdf