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FQD13N10 N-Channel MOSFET

FQD13N10 Description

isc N-Channel MOSFET Transistor *.

FQD13N10 Features

* Static drain-source on-resistance: RDS(on)≤0.18Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

FQD13N10 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Tem

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Datasheet Details

Part number
FQD13N10
Manufacturer
INCHANGE
File Size
273.83 KB
Datasheet
FQD13N10-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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