Datasheet Specifications
- Part number
- FQD13N10
- Manufacturer
- INCHANGE
- File Size
- 273.83 KB
- Datasheet
- FQD13N10-INCHANGE.pdf
- Description
- N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor *.Features
* Static drain-source on-resistance: RDS(on)≤0.18ΩApplications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage TemFQD13N10 Distributors
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