FQD13N10 - N-Channel MOSFET
FQD13N10 Features
* Static drain-source on-resistance: RDS(on)≤0.18Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V
