Description
FQD13N06 * N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
* 10 A, 60 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 5.0 A
* Low Gate Charge (Typ. 5.8 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested
D
G S
D
D-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt