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FQD13N06TM, FQD13N06 60V N-Channel MOSFET

FQD13N06TM Description

FQD13N06 * N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQD13N06TM Features

* 10 A, 60 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 5.0 A
* Low Gate Charge (Typ. 5.8 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: FQD13N06TM, FQD13N06. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FQD13N06TM, FQD13N06
Manufacturer
Fairchild Semiconductor
File Size
812.13 KB
Datasheet
FQD13N06_FairchildSemiconductor.pdf
Description
60V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: FQD13N06TM, FQD13N06.
Please refer to the document for exact specifications by model.

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60V N-Channel MOSFET Fairchild Semiconductor
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