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FQD13N06TM

60V N-Channel MOSFET

FQD13N06TM Features

* 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A

* Low Gate Charge (Typ. 5.8 nC)

* Low Crss (Typ. 15 pF)

* 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

FQD13N06TM General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD13N06TM Datasheet (812.13 KB)

Preview of FQD13N06TM PDF

Datasheet Details

Part number:

FQD13N06TM

Manufacturer:

Fairchild Semiconductor

File Size:

812.13 KB

Description:

60v n-channel mosfet.

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TAGS

FQD13N06TM 60V N-Channel MOSFET Fairchild Semiconductor

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