FQD13N06TM - 60V N-Channel MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQD13N06TM Features
* 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A
* Low Gate Charge (Typ. 5.8 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt
