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FQD50N06 N-Channel MOSFET

FQD50N06 Description

isc N-Channel MOSFET Transistor FQD50N06 *.

FQD50N06 Features

* Drain Source Voltage- : VDSS= 60V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FQD50N06 Applications

* High current , high speed switching
* Switch mode power supplies
* DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Vo

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Datasheet Details

Part number
FQD50N06
Manufacturer
INCHANGE
File Size
245.23 KB
Datasheet
FQD50N06-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FQD50N06-like datasheet