FQD50N06 - N-Channel MOSFET
FQD50N06 Features
* Drain Source Voltage- : VDSS= 60V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* High current , high speed switching
