FQD5N50C - 500V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD5N50C
Manufacturer	Fairchild ↗ Semiconductor
File Size	660.61 KB
Description	500V N-Channel MOSFET
Datasheet	FQD5N50C_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V.
Low gate charge ( typical 18nC).
Low Crss ( typical 15pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS Compliant D D ! D-PAK G S FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuo.

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Published: Apr 1, 2005 |