FQD5N60C

N-Channel MOSFET

ON Semiconductor

FQD5N60C Features

* 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 1.4 A

* Low Gate Charge ( Typ. 15 nC)

* Low Crss (Typ. 6.5 pF)

* 100% Avalanche Tested

* RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s pro

FQD5N60C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQD5N60C Datasheet (0.98 MB)