* 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A
* Low Gate Charge (Typ. 8.5 nC)
* Low Crss (Typ. 4.3 pF)
* 100% Avalanche Tested
* These Devices are Halid Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol
FQD2N60C Datasheet (449.88 KB)
FQD2N60C
449.88 KB
N-channel mosfet.
MOSFET
* N-Channel, QFET)
600 V, 1.9 A, 4,7 W
FQD2N60C / FQU2N60C
This N
*Channel enhancement mode power MOSFET is produced using onse.
📁 Related Datasheet
FQD2N60 - 600V N-Channel MOSFET
(Fairchild Semiconductor)
FQD2N60 / FQU2N60
April 2000
QFET
FQD2N60 / FQU2N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect tr.
FQD2N60C - 600V N-Channel MOSFET
(Fairchild Semiconductor)
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS .
FQD2N100 - 1000V N-Channel MOSFET
(Fairchild Semiconductor)
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
FQD2N100 / FQU2N100
N-Channel QFET® MOSFET
1000 V, 1.6 A, 9 Ω
October 2013
Description
This N-Channel .
FQD2N30 - 300V N-Channel MOSFET
(Fairchild Semiconductor)
.
FQD2N40 - 400V N-Channel MOSFET
(Fairchild Semiconductor)
.
FQD2N50 - 500V N-Channel MOSFET
(Fairchild Semiconductor)
.
FQD2N50B - 500V N-Channel MOSFET
(Fairchild Semiconductor)
FQD2N50B / FQU2N50B
May 2000
QFET
FQD2N50B / FQU2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
FQD2N80 - 800V N-Channel MOSFET
(Fairchild Semiconductor)
FQD2N80 / FQU2N80
September 2000
QFET
FQD2N80 / FQU2N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effec.
