FQD2N30 Datasheet, mosfet equivalent, Fairchild Semiconductor

FQD2N30 Features

• Mosfet 
        =       #    " B !    = 

PDF File Details

Part number:

FQD2N30

Manufacturer:

Fairchild Semiconductor

File Size:

732.82kb

Download:

📄 Datasheet

Description:

300v n-channel mosfet.

TAGS

FQD2N30

Fairchild Semiconductor

📁 Related Datasheet

FQD2N100 - 1000V N-Channel MOSFET (Fairchild Semiconductor)
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET FQD2N100 / FQU2N100 N-Channel QFET® MOSFET 1000 V, 1.6 A, 9 Ω October 2013 Description This N-Channel .

FQD2N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD2N50 - 500V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD2N50B - 500V N-Channel MOSFET (Fairchild Semiconductor)
FQD2N50B / FQU2N50B May 2000 QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

FQD2N60 - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQD2N60 / FQU2N60 April 2000 QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.

FQD2N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS .

FQD2N60C - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary.

FQD2N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQD2N80 / FQU2N80 September 2000 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec.

FQD2N90 - 900V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD20N06 - 60V N-Channel MOSFET (Fairchild Semiconductor)
FQD20N06 / FQU20N06 May 2001 QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect t.