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FQD2N100 1000V N-Channel MOSFET

FQD2N100 Description

FQD2N100 / FQU2N100 * N-Channel QFET® MOSFET FQD2N100 / FQU2N100 N-Channel QFET® MOSFET 1000 V, 1.6 A, 9 Ω October 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQD2N100 Features

* 1.6 A, 1000 V, RDS(on) = 9 Ω (Max. )@ VGS = 10 V, ID = 0.8 A
* Low Gate Charge ( Typ. 12 nC)
* Low Crss ( Typ. 5 pF)
* 100% Avalanche Tested
* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol

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1000V N-Channel MOSFET Fairchild Semiconductor
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