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FQD3P50

P-Channel MOSFET

FQD3P50 Features

* 2.1 A,

* 500 V, RDS(on) = 4.9 W (Max.) @ VGS =

* 10 V, ID =

* 1.05 A

* Low Gate Charge (Typ. 18 nC)

* Low Crss (Typ. 9.5 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant ABSOLUTE MAXIMUM RA

FQD3P50 General Description

This P

*Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on

*state resistance, and to provide superior switching performance and high avalanch.

FQD3P50 Datasheet (390.12 KB)

Preview of FQD3P50 PDF

Datasheet Details

Part number:

FQD3P50

Manufacturer:

ON Semiconductor ↗

File Size:

390.12 KB

Description:

P-channel mosfet.

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TAGS

FQD3P50 P-Channel MOSFET ON Semiconductor

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