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FQD3P50 P-Channel MOSFET

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Description

MOSFET * P-Channel, QFET) -500 V, 4.9 W, -2.1 A FQD3P50 .
This P. Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 2.1 A,
* 500 V, RDS(on) = 4.9 W (Max. ) @ VGS =
* 10 V, ID =
* 1.05 A
* Low Gate Charge (Typ. 18 nC)
* Low Crss (Typ. 9.5 pF)
* 100% Avalanche Tested
* These Devices are Pb
* Free and are RoHS Compliant ABSOLUTE MAXIMUM RA

FQD3P50 Distributors

📁 Related Datasheet

FQD3P50TM_F085 FQD3P20 FQD30N06 FQD30N06L FQD3N25 FQD3N30

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