FQD3P50 Datasheet - ON Semiconductor

FQD3P50 P-Channel MOSFET

This P *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch.

FQD3P50 Features

* 2.1 A,

* 500 V, RDS(on) = 4.9 W (Max.) @ VGS =

* 10 V, ID =

* 1.05 A

* Low Gate Charge (Typ. 18 nC)

* Low Crss (Typ. 9.5 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant ABSOLUTE MAXIMUM RA

FQD3P50-ONSemiconductor.pdf