FQD3P50TM-F085

500V P-Channel MOSFET

ON Semiconductor

FQD3P50TM-F085 Features

* -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V

* Low gate charge ( typical 18 nC)

* Low Crss ( typical 9.5 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Qualified to AEC Q101

* RoHS Compliant S D ! GS D-PA

FQD3P50TM-F085 General Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy .

FQD3P50TM-F085 Datasheet (1.12 MB)