FQD3P20 - 200V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD3P20
Manufacturer	Fairchild ↗ Semiconductor
File Size	549.29 KB
Description	200V P-Channel MOSFET
Datasheet	FQD3P20_FairchildSemiconductor.pdf

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! G! G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°.

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Published: Apr 1, 2005 |