FQD3P20 Datasheet - Fairchild Semiconductor

FQD3P20 200V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD3P20 Features

* -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! G! G S D-PAK FQD Series I-PAK G D S FQU Series ! D

FQD3P20_FairchildSemiconductor.pdf