FQD5N15 - 150V N-Channel MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQD5N15 Features
* 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A
* Low Gate Charge (Typ. 5.4 nC)
* Low Crss (Typ. 7.5 pF)
* 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. , 6 6 , ; 6 ; !$
