FQD5N15 Datasheet, Mosfet, Fairchild Semiconductor

FQD5N15 Features

• Mosfet
• 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A
• Low Gate Charge (Typ. 5.4 nC)
• Low Crss (Typ. 7.5 pF)
• 100% Avalanche Tested D D

PDF File Details

Part number:

FQD5N15

Manufacturer:

Fairchild Semiconductor

File Size:

911.53kb

Download:

📄 Datasheet

Description:

150v n-channel mosfet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

FQD5N15 Application

• Applications Features
• 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A
• Low Gate Charge (Typ. 5.4 nC)

TAGS

FQD5N15

Fairchild Semiconductor

📁 Related Datasheet

FQD5N20 - 200V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD5N20L - 200V N-Channel MOSFET (Fairchild Semiconductor)
FQD5N20L — N-Channel QFET® MOSFET FQD5N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.2 Ω November 2013 Description This N-Channel enhancement mode pow.

FQD5N30 - 300V N-Channel MOSFET (Fairchild Semiconductor)

  
 

  
 
    
    
              .

FQD5N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD5N50 - 500V N-Channel MOSFET (Fairchild Semiconductor)

  
 
 
  
 
    
    
             .

FQD5N50C - 500V N-Channel MOSFET (Fairchild Semiconductor)
FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field e.

FQD5N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQD5N60C / FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description FQD5N60C / FQU5N60C Features • 2.8 A, 600 V,.

FQD5N60C - N-Channel MOSFET (ON Semiconductor)
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET FQD5N60C / FQU5N60C N-Channel QFET® MOSFET 600 V, 2.8 A, 2.5 Ω Features • 2.8 A, 600 V, RDS(on) = 2.5 Ω .

FQD50N06 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) .

FQD50N06 - N-Channel MOSFET (VBsemi)
FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 17.