FQD50P06 P-Channel MOSFET

INCHANGE

Description

isc P-Channel MOSFET Transistor FQD50P06 .
Designed for high current switching applications.

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FQD50P06 Datasheet Preview — Preview of FQD50P06 PDF

Datasheet Specifications

Part number: FQD50P06
Manufacturer: INCHANGE
File Size: 248.74 KB
Datasheet: FQD50P06-INCHANGE.pdf
Description: P-Channel MOSFET

Features

* Drain Current
* ID= -50A@ TC=25℃
* Drain Source Voltage- : VDSS= -60V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max. Operating Junction Temper

FQD50P06 Distributors

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