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FQD50P06

P-Channel MOSFET

FQD50P06 Features

* Drain Current

* ID= -50A@ TC=25℃

* Drain Source Voltage- : VDSS= -60V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Design

FQD50P06 General Description


*Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipati.

FQD50P06 Datasheet (248.74 KB)

Preview of FQD50P06 PDF

Datasheet Details

Part number:

FQD50P06

Manufacturer:

INCHANGE

File Size:

248.74 KB

Description:

P-channel mosfet.

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FQD50P06 P-Channel MOSFET INCHANGE

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