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FQD13N10L Datasheet - Fairchild Semiconductor

FQD13N10L 100V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQD13N10L Features

* 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 8.7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abs

FQD13N10L_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQD13N10L

Manufacturer:

Fairchild Semiconductor

File Size:

548.81 KB

Description:

100v logic n-channel mosfet.

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FQD13N10L FQD13N10L 100V LOGIC N-Channel MOSFET Fairchild Semiconductor

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