FQD13N10 100V N-Channel MOSFET

Fairchild Semiconductor

Description

FQD13N10 / FQU13N10 January 2001 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQD13N10
Manufacturer: Fairchild Semiconductor
File Size: 619.06 KB
Datasheet: FQD13N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

Features

* 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abso

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FQD13N10 100V N-Channel MOSFET Fairchild Semiconductor

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