FQD12N20L Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FQD12N20L Features

* 9.0 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 16 nC)

* Low Crss (Typ. 17 pF)

* 100% Avalanche Tested D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

FQD12N20L General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD12N20L Datasheet (1.20 MB)

FQD12N20L Datasheet Preview — Preview of FQD12N20L PDF

Datasheet Details

Part number:

FQD12N20L

Manufacturer:

Fairchild Semiconductor

File Size:

1.20 MB

Description:

N-channel mosfet.

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FQD12N20L N-Channel MOSFET Fairchild Semiconductor

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FQD12N20L Features

FQD12N20L General Description

Datasheet Details

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Description:

FQD12N20L Distributor