FQD12P10 Datasheet - Fairchild Semiconductor

FQD12P10, 100V P-Channel MOSFET

FQD12P10 / FQU12P10 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

* -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D G S D-PAK FQD Series I-PAK G D S FQU Series G S Absolute Maxim

FQD12P10_FairchildSemiconductor.pdf