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FQD3N60 Datasheet - Fairchild Semiconductor

FQD3N60 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD3N60 Features

* 2.4A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abs

FQD3N60_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQD3N60

Manufacturer:

Fairchild Semiconductor

File Size:

575.95 KB

Description:

600v n-channel mosfet.

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FQD3N60 FQD3N60 600V N-Channel MOSFET Fairchild Semiconductor

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